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Please use this identifier to cite or link to this item: https://repository.rsif-paset.org/xmlui/handle/123456789/209
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dc.contributor.authorOkoth Obila, Jorim-
dc.contributor.authorLei, Hongwei-
dc.contributor.authorOmollo Ayieta, Elijah-
dc.contributor.authorAwuor Ogacho, Alex-
dc.contributor.authorO. Aduda, Bernard-
dc.contributor.authorWang, Feng-
dc.date.accessioned2023-03-15T07:03:23Z-
dc.date.available2023-03-15T07:03:23Z-
dc.date.issued2021-05-24-
dc.identifier.urihttps://repository.rsif-paset.org/xmlui/handle/123456789/209-
dc.descriptionJournal Article Full text: https://doi.org/10.1016/j.matlet.2021.130099en_US
dc.description.abstractTin (Sn) is a promising substitute for lead (Pb) in organic–inorganic hybrid halide perovskite-photovoltaic devices, but it is prone to delivering low power conversion efficiencies (PCEs) due to the poor quality of Sn-perovskite films. In this work, anilinium hypophosphite (AHP) co-additive is used to fabricate high-quality FASnI3 (FA+: formamidinium) perovskite films with suppressed phase-segregation and prolonged charge carrier lifetime. Perovskite films containing 0.05 M AHP are used to fabricate solar cells and deliver improved power conversion efficiency (PCE) of up to 5.48% (control devices: 4.04%). AHP eliminates the phase separation caused by SnF2 in the absorber, leading to films with enhanced optoelectronic properties, hence the high performance of AHP-based devices.en_US
dc.publisherMaterials Lettersen_US
dc.subjectOptoelectronic, FASnI3 films, photovoltaic applicationen_US
dc.titleOptoelectronic property refinement of FASnI3 films for photovoltaic applicationen_US
dc.typeArticleen_US
Appears in Collections:University of Nairobi (UoN)

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