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DC Field | Value | Language |
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dc.contributor.author | Musembi, Robinson | - |
dc.contributor.author | Mbilo, Mwende | - |
dc.contributor.author | Nyamuga, Martin | - |
dc.contributor.author | Kachila, John | - |
dc.date.accessioned | 2024-07-07T11:31:19Z | - |
dc.date.available | 2024-07-07T11:31:19Z | - |
dc.date.issued | 2024-06-15 | - |
dc.identifier.uri | https://repository.rsif-paset.org/xmlui/handle/123456789/416 | - |
dc.description | Journal Article Full-text: https://doi.org/10.1016/j.cocom.2024.e00927 | en_US |
dc.description.abstract | An ab initio study of Zintl Na2CuP ternary semiconductor compounds was carried out by applying first-principles methods to calculate the structural, electronic, elastic, mechanical, and optical properties using generalised gradient approximation (GGA) and metaGGA exchange-correlation functionals. The bandgap was determined to be 0.7523 eV and 0.7848 eV using GGA with Wu-Cohen and Perdew-Burke-Ernzerhof (PBE) functionals, respectively. The bandgap was re-approximated using the more accurate metaGGA functionals as 1.078 eV and 1.084 eV using the Tran-Blaha modified Becke Johnson exchange and correlation functional (TB-mBJ) and the strongly constrained and appropriately normed (SCAN) functional, respectively. The projected density of states using the GGA revealed that the conduction band formation was mainly by Cu 2p, P 2p, and Na 2s orbitals with the rest of the orbitals making a minor contribution. In contrast, the valence band formation was mainly formed by Cu 3d and P 2p, with the rest of the orbital playing a minor role in the formation. The material was found to be mechanically brittle with a covalent bond, which is a characteristic of Zintl-phased materials. The Na2CuP material was also observed to have a strong absorption coefficient between 1.15 eV and 15 eV, a characteristic suitable for photovoltaic applications. | en_US |
dc.publisher | Computational Condensed Matter | en_US |
dc.subject | Na2CuP | en_US |
dc.title | Analysis of Na2CuP ternary semiconductor compound for optoelectronic application by first-principles methods using GGA and mGGA functionals | en_US |
dc.type | Article | en_US |
Appears in Collections: | Energy including Renewables |
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