Optoelectronic property refinement of FASnI3 films for photovoltaic application

Please use this identifier to cite or link to this item: https://repository.rsif-paset.org/xmlui/handle/123456789/94

Title:	Optoelectronic property refinement of FASnI3 films for photovoltaic application
Authors:	Obila, Jorim Okoth Lei, Hongwei Omollo Ayieta, Elijah Ogacho, Alex Awuor Aduda, Bernard O. Wang, Feng
Keywords:	Semiconductors, Solar energy materials, Sn-perovskite, Anilinium hypophosphite
Issue Date:	24-May-2021
Publisher:	Materials Letters
Series/Report no.:	300;
Abstract:	Tin (Sn) is a promising substitute for lead (Pb) in organic–inorganic hybrid halide perovskite-photovoltaic devices, but it is prone to delivering low power conversion efficiencies (PCEs) due to the poor quality of Sn-perovskite films. In this work, anilinium hypophosphite (AHP) co-additive is used to fabricate high-quality FASnI3 (FA+: formamidinium) perovskite films with suppressed phase-segregation and prolonged charge carrier lifetime. Perovskite films containing 0.05 M AHP are used to fabricate solar cells and deliver improved power conversion efficiency (PCE) of up to 5.48% (control devices: 4.04%). AHP eliminates the phase separation caused by SnF2 in the absorber, leading to films with enhanced optoelectronic properties, hence the high performance of AHP-based devices.
Description:	Journal Article Full text: https://doi.org/10.1016/j.matlet.2021.130099
URI:	https://repository.rsif-paset.org/xmlui/handle/123456789/94
Appears in Collections:	Energy including Renewables

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