| dc.contributor.author |
Okoth Obila, Jorim |
|
| dc.contributor.author |
Lei, Hongwei |
|
| dc.contributor.author |
Omollo Ayieta, Elijah |
|
| dc.contributor.author |
Awuor Ogacho, Alex |
|
| dc.contributor.author |
O. Aduda, Bernard |
|
| dc.contributor.author |
Wang, Feng |
|
| dc.date.accessioned |
2023-03-15T07:03:23Z |
|
| dc.date.available |
2023-03-15T07:03:23Z |
|
| dc.date.issued |
2021-05-24 |
|
| dc.identifier.uri |
https://repository.rsif-paset.org/xmlui/handle/123456789/209 |
|
| dc.description |
Journal Article Full text: https://doi.org/10.1016/j.matlet.2021.130099 |
en_US |
| dc.description.abstract |
Tin (Sn) is a promising substitute for lead (Pb) in organic–inorganic hybrid halide perovskite-photovoltaic devices, but it is prone to delivering low power conversion efficiencies (PCEs) due to the poor quality of Sn-perovskite films. In this work, anilinium hypophosphite (AHP) co-additive is used to fabricate high-quality FASnI3 (FA+: formamidinium) perovskite films with suppressed phase-segregation and prolonged charge carrier lifetime. Perovskite films containing 0.05 M AHP are used to fabricate solar cells and deliver improved power conversion efficiency (PCE) of up to 5.48% (control devices: 4.04%). AHP eliminates the phase separation caused by SnF2 in the absorber, leading to films with enhanced optoelectronic properties, hence the high performance of AHP-based devices. |
en_US |
| dc.publisher |
Materials Letters |
en_US |
| dc.subject |
Optoelectronic, FASnI3 films, photovoltaic application |
en_US |
| dc.title |
Optoelectronic property refinement of FASnI3 films for photovoltaic application |
en_US |
| dc.type |
Article |
en_US |