Abstract:
Incorporation of cesium (Cs) into the perovskite layer has become a good strategy to boost the stability and power conversion efficiency (PCE) of perovskite solar cells (PSCs). However, a suitable and scalable method of Cs incorporation in a perovskite film that does not cause a significant increase in the optical bandgap is needed. In this paper, we introduce a thin layer of CsBr into a formamidinium (FA)-rich mixed halide perovskite film using the thermal evaporation technique. The effects of the thickness of the CsBr layer on the microstructural, structural, and optoelectronic properties and surface chemical states of the perovskite film are then studied. The results indicate that the CsBr layer thickness is able to tune the microstructural and optoelectronic properties of the perovskite film. Planar PSCs fabricated with different thicknesses of CsBr layers in the perovskite absorber exhibited different photovoltaic performance characteristics. The CsBr-modified PSC device with a 50 nm layer of CsBr in the perovskite layer showed a better PCE of 16.19% ± 0.17%, which was about 15% higher than that of the control device, and was able to retain nearly 70% of its initial PCE value after 120 days of storage in an unencapsulated state.
